Acerde provides scientific studies and services in the field of High Temperature Chemical Vapor Deposition (HTCVD). The scientific team is specialized in the synthesis of refractory materials with high-crystal properties, using CVD technology mainly from chlorides and fluorides. High temperatures are used to synthesize high quality materials and also provide access to materials requiring high temperature of synthesis such as nitrides and carbides.
CVD reactors designed for silicone carbide free standing wafers elaboration and large scale coating (also BN and AlN coating)

CVD reactor for W and W carbide deposition
Reactors are designed and 'home built' by Acerde's engineers and technicians: 3 reactors are currently operational. They have been designed and optimized for the deposition of tungsten or silicon based materials, and nitrides such as W, WC, SiC, AlN and BN. A new reactor (currently in development) will be exclusively dedicated to the manufacture of single crystal substrates of aluminum nitride (AlN) for the UV LEDs development.
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Acerde proposes to synthesize many materials by HTCVD (see table below) whose properties are recognized in terms of bio-compatibility, mechanical resistance, chemical inertia and thermal conductivity. In addition, high temperatures allow to develop new compounds or known materials which are unable to be elaborated by other traditional manufacturing processes.
Chemical Vapor Deposition at high temperatures is particularly suitable for the following requirements:
Advantages of High Temperature Chemical Vapor Deposition :
- Deposition and coating on 2D and 3D sustrates, simple or complex geometries
- Free standing samples
- Multilayers deposition
- Control of coating thickness (µm to mm)
- Control of size and orientation of grains
- Control of purity and doping
(a)
(b) 
Examples of 2D and 3D coating made by HTCVD: (a) Free standing square wafer (500µm thick SiC) for optical application. (b) Large scale SiC coating (3mm thick inside a 150mm graphite cylinder)
Acerde also offers services in multi-scales characterization and analysis of materials (X-ray Diffraction, SEM, TEM, AFM, EBSD, ...), and develops original solutions adapted to your needs (realization of buffer layers, thermal treatments at high temperatures and cryogenic treatments , multi-layer deposition, ...)
(a)
(b) 
SEM pictures of the cross section of a (a) SiC oriented thick wafer (chemically attacked to reveal the grain size) and (b) the surface of a thin epitaxial AlN film deposited on SiC substrate by HTCVD.