Acerde  is a high-technology company, active in the field of Chemical Vapor Deposition at High Temperature (HTCVD) for coating materials, as well as in the development of advanced new materials: SiC, W, WC, and group III-nitride such as high density BN and  AlN single crystal.

Its expertise on synthesis of refractories by HTCVD (High Temperature Chemical Vapor Deposition) is appreciated by metallurgical industries, research centers (medical, aerospace, astronomy), as well as microelectronics manufacturers for whom this technology seems particularly attractive. Industrial reactors developed by the company can synthesize materials at temperatures above 1500 ° C,  at different scales. Acerde offers services on material coating from few microns to several millimeters.

In parallel with this activity, the company started an AlN development program  in cooperation with several CEA & INPG laboratories and partners such as NOVASIC and SILTRONIX involved respectively in polishing of AlN and formatting of AlN substrates . AlN exhibits a wide direct bandgap, a high electrical resistivity and high thermal conductivity. The availability of AlN single crystal substrates is expected for applications such as group III nitride optoelectronics blue and UV LEDs and LDs, high frequency and high power devices (HEMT) or Surface Acoustic Waves (SAW) emitters and detectors.

    Acerde  won an award from the National Technological Innovation department of France.

    Acerde  was recognized in the “Emergence” category by the Department of Higher education and Research.

Dominique Perrodin, Chief Financial Officer and Didier Pique, Chief Executive Officer